mbr(f,b)20h90ct & mbr(f,b)20h100ct vishay general semiconductor document number: 88673 revision: 08-nov-07 www.vishay.com 1 dual common-cathode high-voltage schottky rectifier high barrier technology for improved high tem perature performance features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020c, lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ab and ito-220ab package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. mechanical data case: to-220ab, ito-220ab, to-263ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 10 a x 2 v rrm 90 v, 100 v i fsm 250 a i r 4.5 a v f 0.64 v t j max. 175 c to-263ab case pin 2 pin 1 pin 3 to-220ab mbr20h90ct MBR20H100CT ito-220ab mbrf20h90ct mbrf20h100ct mbrb20h90ct mbrb20h100ct pin 1 pin 2 k heatsink 1 2 3 1 2 k pin 2 pin 1 pin 3 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr20h90ct MBR20H100CT unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current total device per diode i f(av) 20 10 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 250 a peak repetitive reverse current per diode at t p = 2 s, 1 khz i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v
mbr(f,b)20h90ct & mbr(f,b)20h100ct vishay general semiconductor www.vishay.com document number: 88673 revision: 08-nov-07 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage per diode (1) i f = 10 a i f = 10 a i f = 20 a i f = 20 a t c = 25 c t c = 125 c t c = 25 c t c = 125 c v f 0.77 0.64 0.88 0.73 v maximum reverse current per diode at working peak reverse voltage t j = 25 c t j = 125 c i r 4.5 6.0 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbr mbrf mbrb unit typical thermal resistance per diode r jc 2.0 5.8 2.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab MBR20H100CT-e3/45 1.85 45 50/tube tube ito-220ab mbrf20h100ct-e3/45 1.99 45 50/tube tube to-263ab mbrb20h100ct-e3/45 1.35 45 50/tube tube to-263ab mbrb20h100ct-e3/81 1.35 81 800/reel tape reel to-220ab MBR20H100CThe3/45 (1) 1.85 45 50/tube tube ito-220ab mbrf20h100cthe3/45 (1) 1.99 45 50/tube tube to-263ab mbrb20h100cthe3/45 (1) 1.35 45 50/tube tube to-263ab mbrb20h100cthe3/81 (1) 1.35 81 800/reel tape reel figure 1. forward current derating curve 0 4 8 12 20 16 mbrf mbr mbrb 0 50 100 150 1 8 0 resisti v e or ind u cti v e load case temperat u re (c) a v erage for w ard c u rrent (a) figure 2. maximum non-repetitive peak forward surge current per diode 0 50 150 100 250 200 300 1 100 10 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
mbr(f,b)20h90ct & mbr(f,b)20h100ct vishay general semiconductor document number: 88673 revision: 08-nov-07 www.vishay.com 3 figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse characteristics per diode 0.1 0.2 0.6 0.7 0. 8 0.9 0.3 100 10 0.1 0.01 1 0.4 0.5 1.0 t j = 100 c t j = 150 c t j = 125 c t j = 175 c t j = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 1 1000 0.01 0.1 10000 100 10 20 100 40 60 8 0 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 150 c t j = 125 c t j = 25 c figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 0.1 10 1 100 1000 10000 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) 0.01 0.1 1 10 10 100 0.1 1 transient thermal impedance (c/ w ) t - p u lse d u ration (s)
mbr(f,b)20h90ct & mbr(f,b)20h100ct vishay general semiconductor www.vishay.com document number: 88673 revision: 08-nov-07 4 package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) to-263ab mo u nting pad layo u t 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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